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| TetraFET D2054UK METAL GATE RF SILICON FET MECHANICAL DATA B E D 8 1 7 6 3 4 2 C R A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 13 dB MINIMUM I P H G DBC4 Package PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2 PIN 6 Gate 2 PIN 7 Gate 1 PIN 4 Source (Common) PIN 8 Source (Common) DIM A B C D E F G H I J K L M N O P Q R mm 6.47 0.76 45 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 0.25 Tol. 0.08 0.08 5 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max 0.07 Inches .255 .030 45 .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 0.010 Tol. .003 .003 5 .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max .003 APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/00 Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 29W 65V 20V 2A -65 to 150C 200C D2054UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 13 40 20:1 65 Typ. Max. Unit V 2 2 7 mA mA V S dB % -- VGS(th) Gate Threshold Voltage * TOTAL DEVICE h VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance PER SIDE VDS = 0V VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 24 12 1 pF pF pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 6.0C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/00 |
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